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| MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications Unit: mm * * * High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) 2-95A4A Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting 3/4 3/4 Rating 1200 20 100 200 100 200 690 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque A W C C V Nm 1 2002-10-04 MG100Q2YS65H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon IF = 100 A, VGE = 0 IF = 100 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 100 A VGE = 15 V, RG = 9.1 W Tc = 125C Inductive load VCC = 600 V, IC = 100 A VGE = 15 V, RG = 9.1 W Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 100 mA, VCE = 5 V IC = 100 A, VGE = 15 V Tc = 25C Tc = 125C Min 3/4 3/4 4.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3.0 3.6 8500 0.05 0.05 0.10 0.55 0.05 0.60 2.4 0.1 3/4 3/4 10 8 Max 500 2.0 7.0 4.0 3/4 3/4 3/4 3/4 3/4 3/4 0.15 3/4 3.5 3/4 0.18 0.41 3/4 mJ 3/4 V ms C/W ms Unit nA mA V V pF VCE = 10 V, VGE = 0, f = 1 MHz Note: Switching time measurement circuit and input/output waveforms RG -VGE IC RG IF VGE 0 90% 10% trr L VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton tr 90% 90% 2 2002-10-04 MG100Q2YS65H IC - VCE (sat) 200 20 V 15 V 12 V 200 IC - VCE (sat) 20 V 18 V 12 V 10 V (A) 150 (A) 18 V 10 V 150 15 V IC Collector current 100 PC = 690 W 50 VGE = 8 V Common emitter Tc = 25C 2 4 6 8 10 Collector current IC 100 50 VGE = 8 V Common emitter Tc = 125C 2 4 6 8 10 0 0 0 0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) VCE - VGE 12 12 Common emitter Tc = 25C 10 VCE - VGE Common emitter Tc = 125C 10 (V) VCE 8 VCE Collector-emitter voltage (V) 8 Collector-emitter voltage 6 IC = 200 A 4 100 A 6 IC = 200 A 100 A 4 2 50 A 2 50 A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 200 Common emitter VCE = 5 V 200 Common cathode VGE = 0 IF - VF (A) -40C 150 (A) Forward current IF Tc = 125C 25C -40C 150 Collector current IC 100 100 Tc = 25C 50 50 125C 0 0 4 8 12 16 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Forward voltage VF (V) 3 2002-10-04 MG100Q2YS65H Switching time - IC 1 Common emitter VCC = 600 V VGE = 15 V RG = 9.1 W : Tc = 25C : Tc = 125C 1 Switching time - IC (ms) Switching time 0.1 tr Switching time ton (ms) td (off) toff 0.1 Common emitter td (on) 0.01 10 VCC = 600 V VGE = 15 V RG = 9.1 W 100 0.01 10 30 tf : Tc = 25C : Tc = 125C 100 30 Collector current IC (A) Collector current IC (A) Switching time - RG 1 : Tc = 25C : Tc = 125C ton 10 Switching time - RG Common emitter VCC = 600 V IC = 100 A VGE = 15 V toff : Tc = 25C : Tc = 125C (ms) (ms) td (on) 0.1 tr 1 Switching time Switching time td (off) 0.1 tf Common emitter VCC = 600 V IC = 100 A VGE = 15 V 0.01 0 10 20 30 40 50 60 0.01 0 10 20 30 40 50 60 Gate resistance RG (9) Gate resistance RG (9) Switching loss - IC 100 : Tc = 25C : Tc = 125C Common emitter VCC = 600 V VGE = 15 V RG = 9.1 W 100 Switching loss - RG Common emitter VCC = 600 V IC = 100 A VGE = 15 V Eon Eoff 10 (mJ) 10 Eoff Eon Switching loss 1 Edsw 0.1 1 1 1 Switching loss (mJ) : Tc = 25C : Tc = 125C 10 Edsw 100 10 100 Collector current IC (A) Gate resistance RG (9) 4 2002-10-04 MG100Q2YS65H VCE, VGE - QG 1600 Common emitter RL = 6 W Tc = 25C 1200 VCE = 0 12 16 100000 C - VCE (V) VCE Gate-emitter voltage VGE (V) (pF) 10000 Cies Coes Cres Collector-emitter voltage 800 200 V 400 600 V 400 V 8 Capacitance C 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25C 100 0.01 4 0 0 200 400 600 800 1000 0.1 1 10 100 Charge QG (nC) Collector-emitter voltage VCE (V) Short circuit SOA 6 1000 Reverse bias SOA 5 (x times) (A) Collector current IC 4 3 2 VCC < 900 V = 1 Tj < 125C = tw = 5 ms 0 0 200 400 600 800 1000 1200 1400 100 Collector current 10 1 Tj < 125C = VGE = 15 V RG = 9.1 W 0.1 0 200 400 600 800 1000 1200 1400 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Rth (t) - tw 10 Transient thermal resistance Rth (t) (C/W) 1 Diode stage 0.1 Transistor stage 0.01 Tc = 25C 0.001 0.01 0.001 0.1 1 10 Pulse width tw (s) 5 2002-10-04 MG100Q2YS65H RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-10-04 |
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